MOSFET 2N-CH 30V 6.2A 8SOIC IRF7901D1TRPBF
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Description:
MOSFET 2N-CH 30V 6.2A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
8-SOIC(0.154,3.90mm wide)
DataSheet
IRF7901D1TRPBF(FET, MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory21371,Price reference "real-time change" China/Hongkong。 IRF7901D1TRPBF package/specs, Download IRF7901D1TRPBF、Datasheet。